• DocumentCode
    1987596
  • Title

    Compact modeling for the changing transistor

  • Author

    Chenming Hu

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    Compact model is not only a tool for IC design but also the unique bridge between IC manufacturing and design. It needs not only a mathematical model of a prototype transistor but also accurate models of many real device effects of the modern transistor. Compact model can address not only circuit performance but also reliability. BSIM and BERT are used as examples.
  • Keywords
    insulated gate field effect transistors; integrated circuit design; integrated circuit manufacture; semiconductor device models; semiconductor device reliability; BERT; BSIM; Berkeley short-channel IGFET model; changing transistor; compact modeling; integrated circuit design; integrated circuit manufacturing; integrated circuit reliability; Integrated circuit modeling; Logic gates; Mathematical model; Reliability; Semiconductor device modeling; Solid modeling; Transistors; FinFET; MOSFET; SPICE; compact model; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650571
  • Filename
    6650571
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1987596