DocumentCode
1987601
Title
Parasitic Minimization in RF Multi-Fin FETs
Author
Wu, Wen ; Zhang, Zhikuan ; Chan, Mansun
Author_Institution
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong, E-mail: eewuwen@ust.hk
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
321
Lastpage
324
Abstract
This paper studies the minimization of parasitics in multi-fin MOS devices. A distributed RC model is provided to minimize the gate resistances and the influence of device geometrical parameters on gate RC delay is thoroughly investigated. Also, we give a criterion to achieve the minimal gate resistance for RF device design. Furthermore, methods of reducing source/drain parasitic resistances and capacitances are discussed.
Keywords
Contacts; Delay; FETs; FinFETs; Immune system; MOS devices; MOSFETs; Parasitic capacitance; Radio frequency; Roentgenium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635272
Filename
1635272
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