Title :
Recent enhancements in BSIM6 bulk MOSFET model
Author :
Agarwal, Harshit ; Venugopalan, Sarad ; Chalkiadaki, Maria-Anna ; Paydavosi, Navid ; Duarte, Juan Pablo ; Agnihotri, Shantanu ; Yadav, Chandresh ; Kushwaha, Pragya ; Chauhan, Yogesh Singh ; Enz, C.C. ; Niknejad, A. ; Hu, Chuanmin
Author_Institution :
Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
In this paper, we discuss the recent enhancements made in the BSIM6 bulk MOSFET model. BSIM6 is the latest compact model of bulk MOSFET from BSIM group which have body referenced charge based core. Junction capacitance model is improved over BSIM4 and is infinitely continuous around Vbs=Vbd=0V. Symmetry of the model is successfully validated by performing Gummel Symmetry Test (GST) in DC and symmetry test for capacitances in AC. Self heating model is also included in BSIM6 and test results are reported. Model capabilities are compared against an advanced 40nm CMOS technology and it is observed that simulated results are in excellent agreement with the measured data.
Keywords :
CMOS integrated circuits; MOSFET; semiconductor device models; semiconductor device testing; BSIM6 bulk MOSFET model; CMOS technology; GST; body referenced charge based core; gummel symmetry test; junction capacitance model; self heating model; size 40 nm; Biological system modeling; Capacitance; Integrated circuit modeling; Junctions; Logic gates; MOSFET; Semiconductor device modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650572
