DocumentCode :
1987657
Title :
Compact modeling for application-specific high-sigma worst case
Author :
Hsuan-Han Wang ; Yi-Ling Chen ; Chang-Chieh Yang ; Chung-Kai Lin ; Min-Chie Jeng
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
61
Lastpage :
64
Abstract :
A high-sigma corner model derived from Monte Carlo simulation with a novel sampling algorithm is presented. Compared with the traditional Monte Carlo simulation approach, the simulation effort and computational resource is greatly reduced. This methodology can be applied to create application-specific corner model for different design spec leading to more competitive designs.
Keywords :
Monte Carlo methods; SRAM chips; application specific integrated circuits; integrated circuit modelling; Monte Carlo simulation; application-specific high-sigma worst case model; compact modeling; computational resource; sampling algorithm; Integrated circuit modeling; Monte Carlo methods; Predictive models; SRAM cells; Semiconductor process modeling; Solid modeling; Monte Carlo simulation; SRAM simulation; compact model; high sigma; statistical model; worst case model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650574
Filename :
6650574
Link To Document :
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