Title :
Limits of specific contact resistivity to Si, Ge and III-V semiconductors using interfacial layers
Author :
Shine, Gautam ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Specific contact resistivities of source/drain contacts employing interfacial layers are calculated with simulations of tunneling transport. Fermi level depinning, dipoles, and other techniques for barrier lowering are explored. Interfacial materials with the potential to meet future contact resistivity requirements are identified for silicon and high-mobility alternatives.
Keywords :
Fermi level; III-V semiconductors; contact resistance; elemental semiconductors; germanium; silicon; tunnelling; Fermi level depinning; Ge; III-V semiconductors; Si; dipoles; interfacial layers; source/drain contacts; specific contact resistivity; tunneling transport; Doping; Resistance; Schottky barriers; Silicon; Zinc oxide;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650576
