Modeling Current Transport in Ultra-Scaled Field Effect Transistors

An overview of models for the simulation of current transport in micro-and nanoelectronic devices within the framework of TCAD applications is presented. Modern enhancements of macroscopic transport models based on microscopic theories are specifically addressed. This comprises the inclusion of higher-order moments into the transport models, the incorporation of quantum correction and tunneling models up to dedicated quantum-mechanical simulators, and mixed approaches which are able to account for both, quantum interference and scattering. Specific TCAD requirements are discussed from an engineer´s perspective and an outlook on future research directions is given.