DocumentCode :
1987939
Title :
Understanding workfunction tuning in HKMG by Lanthanum diffusion combining simulations and measurements
Author :
Spessot, A. ; Caillat, Christian ; Fazan, P. ; Ritzenthaler, R. ; Schram, T.
Author_Institution :
Micron Technol. Belgium BVBA, Leuven, Belgium
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
113
Lastpage :
116
Abstract :
In this paper, we propose a method to extract effective diffusion coefficients for Lanthanum in HfO2 for an HKMG technology. TCAD diffusion simulations is combined to the analysis of theoretically expected Work Function shift due to Lanthanum at the HfO2/SiO2 interface and experimentally extracted Work Function value under various thermal budgets, obtaining a good agreement between simulations and experimental data.
Keywords :
hafnium compounds; lanthanum; technology CAD (electronics); HKMG technology; HfO2; La; TCAD diffusion simulations; extract effective diffusion coefficients; extracted work function value; lanthanum diffusion; thermal budgets; workfunction tuning; Hafnium compounds; High K dielectric materials; Lanthanum; Logic gates; Silicon; Standards; Diffusion; HKMG; Lanthanum; Work Function Gate Stack;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650587
Filename :
6650587
Link To Document :
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