Stimulated Raman scattering in one-dimensional Mott-Hubbard insulators: a novel THz source

Author

Ghosh, Haranath ; Chari, Rama

Author_Institution

Laser Phys. Applic. Div., Raja Ramanna Centre for Adv. Technol., Indore, India

fYear

2009

fDate

22-24 Dec. 2009

Firstpage

152

Lastpage

155

Abstract

One dimensional Mott-Hubbard insulators are modeled within 2-band extended Hubbard model. The model is solved exactly numerically for finite lattice. These numerical data are used to compute various nonlinear susceptibilities like third Harmonic generation, two photon absorption, electro absorption as well as the stimulated Raman scattering. The stimulated Raman scattering susceptibility for three one-dimensional Mott-Hubbard insulators is found to be very large even compared to other nonlinear optical susceptibilities. This is the first ever study on stimulated Raman scattering of one dimensional strongly correlated systems. This leads to a potential for strong Stokes generation in the THz regime from these compounds.

Keywords

Hubbard model; calcium compounds; electro-optical effects; insulating materials; localised states; microwave photonics; nonlinear optical susceptibility; optical harmonic generation; optical materials; organic compounds; stimulated Raman scattering; strontium compounds; two-photon processes; 1D Mott-Hubbard insulators; 2-band extended Hubbard model; Ca₂CuO₃; Sr₂CuO₃; Stokes generation; THz source; electro absorption; finite lattice; nonlinear optical susceptibilities; stimulated Raman scattering; third Harmonic generation; two photon absorption; Biomedical optical imaging; Frequency; Insulation; Nonlinear optical devices; Nonlinear optics; Optical harmonic generation; Optical pumping; Optical scattering; Raman scattering; Stimulated emission; Nonlinear optics; THz; nanophotonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Conference_Location

Varanasi

Print_ISBN

978-1-4244-4846-3

Type

conf

DOI

10.1109/ELECTRO.2009.5441151

Filename

5441151