Unified FinFET compact model: Modelling Trapezoidal Triple-Gate FinFETs

Author

Duarte, Juan Pablo ; Paydavosi, Navid ; Venugopalan, Sarad ; Sachid, Angada ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

135

Lastpage

138

Abstract

A unified FinFET compact model is proposed for devices with complex fin cross-sections. It is represented in a normalized form, where only four different model parameters are needed. The proposed model accurately predicts the current-voltage characteristics of different FinFETs structures such as Double-Gate (DG), Cylindrical Gate-All-Around (Cy-GAA), or Rectangular Gate-All-Around (Re-GAA) FinFETs. In addition, for the first time, Trapezoidal Triple-Gate (T-TG) FinFETs are accurately modelled. Short-Channel-Effects (SCE) sub-models have been also implemented in the presented work. The model has been verified with TCAD data.

Keywords

MOSFET; semiconductor device models; complex fin cross-section; current-voltage characteristics; cylindrical gate-all-around FinFET; double gate FinFET; rectangular gate-all-around FinFET; short channel effect; trapezoidal triple-gate FinFET; unified FinFET compact model; FinFETs; Integrated circuit modeling; Logic gates; Mathematical model; Semiconductor device modeling; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650593

Filename

6650593