Design of nonelectrode microwave-biased radiation detectors

Actual ways of development of measuring microwave resonant systems with contactless inclusion of a sensor sensitive to ionizing radiation fulfilled from wide-gap compound semiconductor such as CdTe (CdZnTe) are offered. The numerical modeling and optimization of several kinds of such resonant systems has allowed approaching to a constructional design of effective radiating semiconductor microwave-biased sensors. It is expected, that the sensitivity of sensors being under consideration will not depend on capacity of absorbed doze of radiation. The most satisfactory detecting device is toroidal resonator, in capacitance backlash of which the sensor sensitive to radiation is installed, where the maximal intensity of electrical field with a high degree of uniformity takes place.