DocumentCode
1988209
Title
Expanding role of predictive TCAD in advanced technology development
Author
Wu, Junyong ; Diaz, Carlos H.
Author_Institution
TCAD Div., Taiwan Semicond. Manuf. Co. (TSMC), Hsinchu, Taiwan
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
167
Lastpage
171
Abstract
TCAD plays an increasingly critical role in advanced technology research and development. The areas of impact expanded to not only predicting device outcome from process input, but also to topics traditionally not addressed by TCAD.
Keywords
integrated circuit design; semiconductor device models; technology CAD (electronics); advanced technology development; advanced technology research; predictive TCAD; FinFETs; Logic gates; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Stress; CMOS scaling; KMC; Predictive TCAD; atomistic; hierarchical; simulation; stress; variability;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650601
Filename
6650601
Link To Document