Density Gradient calibration for 2D quantum confinement: Tri-Gate SOI transistor application

This article presents a Density-Gradient (DG) calibration for 2D quantum confinement on Tri-Gate Silicon on insulator cross section for which the top gate interface is <;100>-oriented and the lateral gate interfaces are <;110>-oriented. To calibrate the DG model, we use self-consistent Poisson-Schrödinger calculations and fit the capacitance vs gate voltage (C-V) curves. We first calibrate DG model for one-dimensional quantum confinement (1D) on planar devices cross section for both crystal orientations. Then, we check the validity of the parameters obtained for the two-dimensional (2D) quantum confinement on tri-gate architecture cross-section. The DG model allows a good description of the C-V curves in the case of 2D quantum confinement and the parameters are still valid when we reduce the Tri-Gate cross section up to 4 nm by side.