DocumentCode
1988354
Title
3-D simulation of silicon oxidation: Challenges, progress and results
Author
Guoy, Damrong ; Gencer, Alp H. ; Zhiqiang Tan ; Chalasani, Satish ; Johnson, Mark ; Villablanca, Luis ; Simeonov, S.
Author_Institution
Synopsys, Inc., Mountain View, CA, USA
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
196
Lastpage
199
Abstract
We report a new algorithm for solving the moving boundary problem of oxidation of silicon in 3D structures. The algorithm solves many of the boundary and mesh quality problems that makes 3D oxidation simulations challenging. Using this algorithm, we demonstrate that complicated 3D oxidation steps can be performed and results can be obtained in a reasonable amount of time.
Keywords
elemental semiconductors; oxidation; semiconductor process modelling; silicon; 3D oxidation simulations; 3D simulation; 3D structures; Si; mesh quality problems; moving boundary problem; silicon oxidation; Oxidation; Semiconductor device modeling; Semiconductor process modeling; Silicon; Solid modeling; Surface treatment; Three-dimensional displays; LOCOS; Oxidation; moving boundary; trench oxidation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650608
Filename
6650608
Link To Document