• DocumentCode
    1988432
  • Title

    Modeling the growth of thin SnO2 films using spray pyrolysis deposition

  • Author

    Filipovic, Lado ; Selberherr, Siegfried ; Mutinati, Giorgio C. ; Brunet, Elise ; Steinhauer, Stephan ; Kock, Alexander ; Teva, Jordi ; Kraft, J. ; Siegert, Joerg ; Schrank, Franz ; Gspan, Christian ; Grogger, Werner

  • Author_Institution
    Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    208
  • Lastpage
    211
  • Abstract
    The deposition of a thin tin oxide film allows for the manufacture of modern gas sensors to replace the bulky sensors of previous generations. Spray pyrolysis deposition is used to grow the required sensing thin films, as it can be seamlessly integrated into a standard CMOS processing sequence. A model for spray pyrolysis deposition is developed and implemented within the Level Set framework. The implementation allows for a seamless integration of multiple processing steps for the manufacture of smart gas sensor devices. From observations it was noted that spray pyrolysis deposition, when performed with a gas pressure nozzle, results in good step coverage, analogous to a CVD process. This is due to the liquid droplets evaporating prior to contact with the heated wafer surface and subsequently depositing on top of the exposed silicon in vapor form.
  • Keywords
    chemical vapour deposition; gas sensors; pyrolysis; semiconductor growth; semiconductor thin films; spray coating techniques; thin film sensors; tin compounds; CVD process; Si; SnO2; bulky sensors; gas pressure nozzle; level set framework; liquid droplet evaporation; modern gas sensors; multiple processing steps; seamless integration; smart gas sensor devices; spray pyrolysis deposition; standard CMOS processing sequence; thin film sensing; tin oxide thin film growth modeling; wafer surface heating; Gas detectors; Level set; Semiconductor device modeling; Substrates; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650611
  • Filename
    6650611