DocumentCode
1988435
Title
Low power squaring and square root circuits using subthreshold MOS transistors
Author
Nag, Amlan ; Paily, Roy P.
Author_Institution
NIT Silchar, Silchar, India
fYear
2009
fDate
22-24 Dec. 2009
Firstpage
96
Lastpage
99
Abstract
This paper describes how the translinear (TL) principle can be purposefully exploited for MOS transistors operating in subthreshold region. Due to the exponential current-voltage relationship of subthreshold MOS transistors, they are comparable with BJTs as far as TL principle is concerned. Here squaring and square rooting circuits are implemented using subthreshold MOS devices.
Keywords
MIS devices; MOSFET; low-power electronics; BJT; TL principle; exponential current-voltage relationship; low power squaring circuits; square root circuits; square rooting circuits; subthreshold MOS devices; subthreshold MOS transistors; translinear principle; Circuit analysis; Dynamic range; Feedback circuits; Low voltage; MOS devices; MOSFETs; Negative feedback; Negative feedback loops; Performance analysis; Power engineering and energy; Subthreshold MOS; Translinear Principle; square rooting circuit; squaring circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location
Varanasi
Print_ISBN
978-1-4244-4846-3
Type
conf
DOI
10.1109/ELECTRO.2009.5441165
Filename
5441165
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