DocumentCode
1988571
Title
Influence of temperature on the standard deviation of electromigration lifetimes
Author
de Orio, R.L. ; Ceric, H. ; Selberherr, Siegfried
Author_Institution
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
232
Lastpage
235
Abstract
The electromigration (EM) lifetime standard deviation dependence on temperature for copper damascene interconnects is investigated. An analytical expression for the standard deviation as a function of temperature is obtained based on error propagation analysis applied to a typical EM-induced void growth model. It is shown that good agreement with experimental results is obtained. Furthermore, the impact of such an analysis on the extrapolation of EM lifetimes to use conditions is discussed.
Keywords
copper; electromigration; extrapolation; integrated circuit interconnections; integrated circuit reliability; voids (solid); copper damascene interconnects; electromigration lifetime standard deviation; error propagation analysis; extrapolation; temperature on; void growth model; Electromigration; Extrapolation; Life estimation; Reliability; Resistance; Standards; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650617
Filename
6650617
Link To Document