Title :
Semiconductors and Devices for Advanced Microwave Application
Author_Institution :
Institute of Semiconductor Electronics, Technical University Aachen, 5100 Aachen, FRG
Keywords :
Bipolar transistors; Doping; Electrons; Epitaxial layers; Frequency response; HEMTs; Heterojunctions; III-V semiconductor materials; Microwave devices; Semiconductor device noise;
Conference_Titel :
Microwave Conference, 1984. 14th European
Conference_Location :
Liege, Belgium
DOI :
10.1109/EUMA.1984.333328