Title :
A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETs
Author_Institution :
Department of Electronic Engineering, the Southern Taiwan University of Technology, Taiwan, E-mail: tkchiang@mail.stut.edu.tw
Abstract :
Based on two-dimensional(2D) potential analysis, a compact, analytical model for threshold voltage in cylindrical, fully-depleted, surrounding-gate(SG) MOSFETs is derived. The minimum surface potential μmin,surfaceis used to develop the threshold voltage model. Besides decreasing the characteristic factor, both the thin silicon body and gate oxide can reduce the threshold voltage roll-off simultaneously. It is also found that the threshold voltage shift is dependent on the scaling factor of λ1L. The high scaling factor is preferred to alleviate threshold voltage degradation.
Keywords :
Analytical models; Computational modeling; Degradation; MOSFETs; Numerical simulation; Physics; Semiconductor process modeling; Silicon; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635330
