DocumentCode
1988774
Title
Efficient Wigner function simulation for nanowire MOSFETs and comparison to Quantum Drift-Diffusion
Author
Badami, O. ; Saha, D. ; Ganguly, Shaumik
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
272
Lastpage
275
Abstract
In this paper, we have developed a full Quantum Device Simulator by solving the Wigner equation in the mode space for a cylindrical nanowire MOSFET. A novel and efficient numerical technique to solve the Wigner equation has been developed. It´s comparison with the LU decomposition method shows that significant improvement in the simulation time is obtained. Comparison of the results obtained from the Wigner equation and Quantum Drift Diffusion method suggests that later can be continued to be used after suitable adjustments to the mobility and effective masses (across the transport). Timing comparison of the Wigner equation and QDD formalism indicates that the later is more than 200 times faster than the Wigner equation.
Keywords
MOSFET; nanowires; quantum optics; MOSFET; Wigner function simulation; decomposition method; nanowire; quantum device simulator; quantum drift-diffusion method; Equations; MOSFET; Mathematical model; Poisson equations; Schrodinger equation; Sparse matrices; Generalized Einstein´s relatiosship; Quantum Drift Diffusion; Quantum Wigner Equation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650627
Filename
6650627
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