• DocumentCode
    1988774
  • Title

    Efficient Wigner function simulation for nanowire MOSFETs and comparison to Quantum Drift-Diffusion

  • Author

    Badami, O. ; Saha, D. ; Ganguly, Shaumik

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    272
  • Lastpage
    275
  • Abstract
    In this paper, we have developed a full Quantum Device Simulator by solving the Wigner equation in the mode space for a cylindrical nanowire MOSFET. A novel and efficient numerical technique to solve the Wigner equation has been developed. It´s comparison with the LU decomposition method shows that significant improvement in the simulation time is obtained. Comparison of the results obtained from the Wigner equation and Quantum Drift Diffusion method suggests that later can be continued to be used after suitable adjustments to the mobility and effective masses (across the transport). Timing comparison of the Wigner equation and QDD formalism indicates that the later is more than 200 times faster than the Wigner equation.
  • Keywords
    MOSFET; nanowires; quantum optics; MOSFET; Wigner function simulation; decomposition method; nanowire; quantum device simulator; quantum drift-diffusion method; Equations; MOSFET; Mathematical model; Poisson equations; Schrodinger equation; Sparse matrices; Generalized Einstein´s relatiosship; Quantum Drift Diffusion; Quantum Wigner Equation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650627
  • Filename
    6650627