Compact modeling of SOI MOSFETs with ultra thin silicon and BOX layers for ultra low power applications

Author

Fukunaga, Yoshihiro ; Miura-Mattausch, M. ; Feldmann, Uwe ; Kikuchiharasa, H. ; Miyake, M. ; Mattausch, Hans Jurgen ; Nakagawa, T.

Author_Institution

Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

284

Lastpage

287

Abstract

A compact model for SOI-MOSFET with ultra-thin both SOI and BOX layers has been developed base on the potential distribution within the device. The potential distribution is calculated by solving the Poisson equation together with additional analytical equations derived under approximations. All equations are solved simultaneously by the Newton iteration method. It is demonstrated that the model can not only reproduce measured specific device characteristics but can even predict change of device characteristics caused by device parameter change.

Keywords

MOSFET; Poisson equation; iterative methods; low-power electronics; semiconductor device models; silicon-on-insulator; thin film transistors; BOX layer; Newton iteration method; Poisson equation; compact modeling; device parameter change; potential distribution; potential-based model; silicon-on-insulator MOSFET; ultra low power application; ultra thin SOI layer; Electric potential; Equations; MOSFET; Mathematical model; Poisson equations; Simulation; Substrates; Poisson equation; SOI-MOSFET; compact model; potential-based model; thin-film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650630

Filename

6650630