DocumentCode :
1988848
Title :
An analytical model for organic thin film transistors
Author :
Li, Ling ; Kosina, Hans
Author_Institution :
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria. ling.li@iue.tuwien.ac.at
fYear :
2005
fDate :
19-21 Dec. 2005
Firstpage :
571
Lastpage :
574
Abstract :
An analytical model that describes the DC characteristics of organic thin film transistors (OTFTs) is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. As verified by published data, the model provides an accurate and efficient prediction for transfer characteristics and output characteristics of OTFT via simple formulations.
Keywords :
Analytical models; Conductivity; Crystallization; FETs; MOSFETs; Organic semiconductors; Organic thin film transistors; Thin film transistors; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
Type :
conf
DOI :
10.1109/EDSSC.2005.1635337
Filename :
1635337
Link To Document :
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