Title :
An analytical model for organic thin film transistors
Author :
Li, Ling ; Kosina, Hans
Author_Institution :
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria. ling.li@iue.tuwien.ac.at
Abstract :
An analytical model that describes the DC characteristics of organic thin film transistors (OTFTs) is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. As verified by published data, the model provides an accurate and efficient prediction for transfer characteristics and output characteristics of OTFT via simple formulations.
Keywords :
Analytical models; Conductivity; Crystallization; FETs; MOSFETs; Organic semiconductors; Organic thin film transistors; Thin film transistors; Tunneling; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635337