• DocumentCode
    1988865
  • Title

    Fabrication and Electrical Characteristics of AgTCNQ Crossbar Switches for Organic Molecular Memories and Logics

  • Author

    Tu, D.Y. ; Wang, C.S. ; Ji, Z.Y. ; Hu, W.P. ; Liu, M.

  • Author_Institution
    Key Lab of Nano-Fabrication and Novel devices integrated technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    575
  • Lastpage
    578
  • Abstract
    The 8x8 crossbar switches with sandwiching AgTCNQ (TCNQ = 7,7,8,8-tetracyano-p-quinodimethane) organic molecular materials were successfully fabricated, and electrical characteristics of the cross points were studied in this paper. In the OFF state, the resistance of switches was 5.60x103ohms that stands for "0"; while in the ON state, the resistance of switches was 1.96x103ohms that stands for "1". This phenomenon was simply interpreted based on phase transition caused by charge transfer. The switches could be used for memories as well as electrical configurable logic gates, such as an AND, an OR and even an NOT gate.
  • Keywords
    CMOS technology; Charge transfer; Costs; Electric resistance; Electric variables; Fabrication; Logic; Moore´s Law; Switches; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635338
  • Filename
    1635338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1988865