A New Millimeter-Wave Fixture Deembedding Method Based on Generalized Cascade Network Model

Author

Loo, Xi Sung ; Yeo, Kiat Seng ; Chew, Kok Wai Johnny ; Chan, Lye Hock Kelvin ; Ong, Shih Ni ; Do, M.A. ; Boon, Chirn Chye

Author_Institution

GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, Singapore

Volume

34

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

447

Lastpage

449

Abstract

In this letter, a universal cascade-based deembedding technique was presented for on-wafer characterization of the RF CMOS device. As compared with existing deembedding approaches, it is developed based on unique combinations of two THRU structures that enable efficient deembedding of fixture parasitics without any inaccurate lumped approximation or requirement of known standards. The proposed deembedding technique is validated on 0.13- μm CMOS devices and has been proven to be more accurate than existing lumped and cascade-based deembedding techniques. As a result, it gives deeper physical prediction on transistor gate capacitances and transconductance. Therefore, it is highly suitable to be applied for device characterization at millimeter-wave frequencies.

Keywords

CMOS integrated circuits; integrated circuit layout; radiofrequency integrated circuits; RF CMOS device; THRU structures; cascade-based deembedding techniques; fixture parasitics; generalized cascade network model; lumped approximation; millimeter-wave fixture deembedding method; millimeter-wave frequencies; on-wafer characterization; transconductance; transistor gate capacitances; universal cascade-based deembedding technique; CMOS integrated circuits; CMOS technology; Couplings; Metals; Millimeter wave transistors; Layout; millimeter-wave field-effect transistors; scattering matrices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2237157

Filename

6415982