DocumentCode
1988921
Title
Semiconductor DFB laser with plasmonic metal layers for subwavelength confinement of light
Author
Amemiya, Tomohiro ; Shindo, Takahiko ; Takahashi, Daisuke ; Myoga, Seiji ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo, Japan
fYear
2011
fDate
Aug. 28 2011-Sept. 1 2011
Firstpage
863
Lastpage
865
Abstract
An InP-based 1.55-μm wavelength DFB laser that uses surface plasmon polaritons for light confinement is proposed. A threshold current of 650 μA can be expected with the waveguide width of 200 nm and the cavity length of 76.5 μm. The device is monolithically integratable with waveguide-based optical devices.
Keywords
III-V semiconductors; distributed feedback lasers; indium compounds; laser cavity resonators; plasmonics; polaritons; semiconductor lasers; surface plasmons; waveguide lasers; InP; cavity length; monolithic integration; plasmonic metal layers; semiconductor DFB laser; size 200 nm; size 76.5 mum; subwavelength light confinement; surface plasmon polaritons; threshold current; waveguide width; waveguide-based optical devices; Cavity resonators; Indium phosphide; Metals; Optical waveguides; Plasmons; Threshold current; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location
Sydney, NSW
Print_ISBN
978-1-4577-1939-4
Type
conf
DOI
10.1109/IQEC-CLEO.2011.6193896
Filename
6193896
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