• DocumentCode
    1988948
  • Title

    Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

  • Author

    Yan, Kunlun ; Wang, Rongping ; Vu, Khu ; Elliman, Robert ; Belay, Kidane ; Luther-Davies, Barry

  • Author_Institution
    Centre for Ultrahigh Bandwidth Devices for Opt. Syst., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2011
  • fDate
    Aug. 28 2011-Sept. 1 2011
  • Firstpage
    1612
  • Lastpage
    1616
  • Abstract
    We report ion-implanted Er ions into Ge11.5As24Se64.5 thin films with different doses, and subsequently thermal-annealed the films with different times. The characterization results indicated that the thickness, refractive index and optical bandgap of the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the 4I13/2→4I15/2 transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.
  • Keywords
    annealing; arsenic compounds; chalcogenide glasses; erbium; germanium compounds; ion implantation; photoluminescence; semiconductor thin films; GeAsSe:Er; chalcogenide thin films; ion-implantation; optical bandgap; photoluminescence; refractive index; thermal annealing; thermal-annealing; thickness; time 3 hour; Annealing; Erbium; Glass; Optical amplifiers; Optical films; Photoluminescence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4577-1939-4
  • Type

    conf

  • DOI
    10.1109/IQEC-CLEO.2011.6193898
  • Filename
    6193898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1988948