Title :
Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides
Author :
Habersat, Daniel B. ; Lelis, Aivars J. ; Goldsman, N.
Author_Institution :
Power Components Branch, U.S. Army Res. Lab., Adelphi, MD, USA
Abstract :
A time domain, drift-diffusion based numerical simulator has been developed to better understand the influence of mobile ion transport in gate oxides for SiC power MOSFETs. Experimental evidence of mobile ion contamination in SiC MOS has been well documented in general, but proper analysis has been hampered by the presence of significant numbers of defects that distort the results. We report here on the initial results from a numerical simulator that will be able to incorporate models for these additional defect mechanisms in order to provide insight on these key mechanisms that are limiting the performance and reliability of SiC MOS technologies.
Keywords :
defect states; power MOSFET; semiconductor device models; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; defect mechanisms; drift-diffusion based numerical simulator; ion transport; mobile ion contamination; silicon carbide power MOSFET gate oxides; Ions; Logic gates; MOSFET; Mathematical model; Mobile communication; Numerical models; Silicon carbide; Silicon Carbide (SiC); Silicon Dioxide (SiO2); drift-diffusion; metal oxide semiconductor (MOS); mobile ions; numerical simulation;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650640
