Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides

Author

Habersat, Daniel B. ; Lelis, Aivars J. ; Goldsman, N.

Author_Institution

Power Components Branch, U.S. Army Res. Lab., Adelphi, MD, USA

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

324

Lastpage

327

Abstract

A time domain, drift-diffusion based numerical simulator has been developed to better understand the influence of mobile ion transport in gate oxides for SiC power MOSFETs. Experimental evidence of mobile ion contamination in SiC MOS has been well documented in general, but proper analysis has been hampered by the presence of significant numbers of defects that distort the results. We report here on the initial results from a numerical simulator that will be able to incorporate models for these additional defect mechanisms in order to provide insight on these key mechanisms that are limiting the performance and reliability of SiC MOS technologies.

Keywords

defect states; power MOSFET; semiconductor device models; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; defect mechanisms; drift-diffusion based numerical simulator; ion transport; mobile ion contamination; silicon carbide power MOSFET gate oxides; Ions; Logic gates; MOSFET; Mathematical model; Mobile communication; Numerical models; Silicon carbide; Silicon Carbide (SiC); Silicon Dioxide (SiO2); drift-diffusion; metal oxide semiconductor (MOS); mobile ions; numerical simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650640

Filename

6650640