DocumentCode :
1989084
Title :
Accelerated variation simulation through parameter reduction
Author :
Griffin, W. Paul ; Roy, Kaushik
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
336
Lastpage :
339
Abstract :
Proper understanding of the effects of parameter variations in a circuit requires simulation; unfortunately, accurate variation simulation can hinder simulation performance. Even though the majority of interdie variations occur between four parameters (L, W, tox, Vfb) [1], this parameter set is still too big for efficient large-scale simulations. As these variations all affect threshold voltage (Vth), ΔVth is often used as a substitute for variations [2], [3]. While a ΔVth substitute offers vast improvement in runtime, it has a rarely-understood loss in quality. In this work, we demonstrate two methods that, when presented with a set of device variations (L, W, tox, Vfb) and a model, can simplify those variations into a reusable model that provides accelerated simulation. Our first method, approximate ΔVgs superposition, offers an accelerated method to reduce process variations down a single, manageable ΔVth-like parameter. Our second, reduced parameter method, preserves the effects of individual variations while lowering the runtime complexity. Instead of generating device attributes specific to the tested circuit, our method used a dynamic superposition approach to interpolate device parameters from a reduced-dimension lookup table. Both of our methods demonstrate significant runtime computation savings, with a low break-even point as compared to the original model. While the ΔVgs approach does demonstrate a noticeable quality loss compared to the original model, our reduced parameter approach demonstrates minimal loss in quality.
Keywords :
MOSFET; circuit simulation; interpolation; semiconductor device models; table lookup; accelerated variation simulation; device variations; dynamic superposition; lookup table; parameter reduction; parameter variations; reusable model; runtime complexity; tested circuit; threshold voltage; Acceleration; Integrated circuit modeling; Random access memory; Runtime; Semiconductor device modeling; Threshold voltage; Transistors; MOSFET; Parameter variations; nanoscale;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650643
Filename :
6650643
Link To Document :
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