DocumentCode :
1989205
Title :
Surface-roughness-scattering in non-planar channels — The role of band anisotropy
Author :
Stanojevic, Zlatan ; Kosina, Hans
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
352
Lastpage :
355
Abstract :
In this work, we investigate the effect of band structure anisotropy and channel orientation on SRS in non-planar channels such as tri-gate and GAA structures. A new formalism is introduced for calculating SRS rates for non-planar structures. The formalism is an extension of the theory by Prange and Nee for planar structures, which has been widely used for calculating the conductivity of inversion layers and thin films. We derive matrix elements for open and closed surfaces of arbitrary shape taking anisotropy of the band structure fully into account. Numerical experiments performed on tri-gate and GAA cross-sections indicate that SRS is greatly influenced by band anisotropy and channel orientation.
Keywords :
band structure; surface roughness; surface scattering; GAA structures; SRS rates; arbitrary shape; band anisotropy; band structure anisotropy; channel orientation; inversion layers; matrix elements; nonplanar channels; nonplanar structures; surface-roughness-scattering; thin films; tri-gate structures; Anisotropic magnetoresistance; Correlation; Logic gates; Rough surfaces; Scattering; Silicon; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650647
Filename :
6650647
Link To Document :
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