• DocumentCode
    1989336
  • Title

    Performance of an InP MISFET X-Band Oscillator and K-Band Oscillator-Doubler

  • Author

    Soares, R. ; Castelletto, J.P. ; Legaud, P. ; Armand, M.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, LAB/MER/MLS - B.P. 40, 22301 LANNION CEDEX - FRANCE
  • fYear
    1984
  • fDate
    10-13 Sept. 1984
  • Firstpage
    263
  • Lastpage
    267
  • Abstract
    Results for an InP MISFET 1.5 ¿m × 300 ¿m device used as an oscillator and an oscillator doubler are presented. A fundamental frequency oscillator using the transistor in the reverse channel mode and dielectric resonator stabilised was designed to operate at 9.8 GHz and supplied 80 mW output power at this frequency with RF/dc efficiency of 9%. The second harmonic oscillator gave 12.6 mW at 19.6 GHz with 1.7% RF/dc efficiency.
  • Keywords
    Dielectrics; Indium phosphide; Insulation; K-band; MISFETs; Oscillators; Power amplifiers; Power generation; Radio frequency; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1984. 14th European
  • Conference_Location
    Liege, Belgium
  • Type

    conf

  • DOI
    10.1109/EUMA.1984.333406
  • Filename
    4132043
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1989336