Calculation of the valence band structure in strained In0.7Ga0.3As devices with different surface orientation

Author

Pengying Chang ; Lang Zeng ; Xiaoyan Liu ; Kangliang Wei ; Jieyu Qin ; Kai Zhao ; Gang Du ; Xing Zhang

Author_Institution

Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

388

Lastpage

391

Abstract

Using the eight-band k·p Hamiltonian approach, the valence band structure of strained In_0.7Ga_0.3As is calculated for (001), (110) and (111) orientation. The impact of biaxial strain and uniaxial strain on energy band splitting and warping is investigated. The dependency of the valence band structure on the surface electric field and body thickness is also studied in this work.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; valence bands; (001) orientation; (110) orientation; (111) orientation; Hamiltonian approach; In_0.7Ga_0.3As; biaxial strain; body thickness; energy band splitting; strained orientation; surface electric field; surface orientation; uniaxial strain; valence band structure; warping; Educational institutions; Electric fields; Microelectronics; Quantization (signal); Stress; Uniaxial strain; In0.7Ga0.3As; biaxial strain; body thickness; eight-band k·p method; uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650656

Filename

6650656