DocumentCode
1989454
Title
Quantitative full 3D blooming analysis on 1.4um BSI CMOS image sensor
Author
Sengoku, Mitsuhiro ; Yoshimura, Hiroyuki ; Sugiura, Yuta ; Shimizu, Shogo ; Hasumi, Ryoji ; Monoi, Makoto
Author_Institution
TCAD Group, Toshiba I.S. Corp., Oita, Japan
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
400
Lastpage
403
Abstract
3D TCAD analysis of blooming for 1.4 μm CMOS image sensor (CIS) with two-shared pixel structure has been performed. Its blooming behavior has been modeled and clear design guidelines for potential control inside CIS pixels have been obtained.
Keywords
CMOS image sensors; technology CAD (electronics); 3D TCAD analysis; BSI CMOS image sensor; CIS; backside illumination; quantitative full 3D blooming analysis; size 1.4 mum; two-shared pixel structure; CMOS image sensors; Electric potential; Lighting; Semiconductor device modeling; Semiconductor process modeling; Three-dimensional displays; Transistors; Blooming; CMOS Image Sensor; TCAD;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650659
Filename
6650659
Link To Document