One-shot current conserving approach of phonon scattering treatment in nano-transistors

Phonon scattering can drastically influence transport properties of nanodevices. From a simulation point of view, the non-equilibrium Green´s function formalism provides a natural way to include inelastic scattering in quantum transport codes, by means of self-energies. Phonon scattering is usually treated with the so-called self-consistent Born approximation which involves the evaluation of the SCBA self-energy together with the electrostatic potential; a computationally expensive self-consistent procedure. In this work we present an alternative one-shot current conserving method to treat phonon scattering and apply it to the modeling of silicon n-type nano-wire and p-type double-gate MOSFETs.