• DocumentCode
    1989596
  • Title

    The Degradation Mode of Dual Metal-Gates/High-K CMOSFETs Induced by Bias-Temperature Instability

  • Author

    Liao, Chin-Chang ; Wang, Jian-Ping ; Liao, Miao ; Wong, Waisum

  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    691
  • Lastpage
    693
  • Abstract
    We have measured the Bias-Temperature Instability (BTI) effects on fully silicided-gate/Al2O3(EOT=1.7 nm) and metal-gates/LaAIO3(EOT=1.4 nm) CMOSFETs. Small ΔVtchanges of -33 and 34 mV are measured in fully silicided-gate/AI2O3CMOSFETs and reduce to -21 and 10 mV in metal-gates/LaAIO3devices after 10 MV/cm and 85°C stress. The extrapolated operation voltages for 10 years lifetime, at failure criteria of 50 m ΔVtunder 10 MV/cm and 85°C stress, are 1.12 and 1.2 V for silicided-gate/AI2O3and metal-gates/LaAIO3p-MOSFETs, respectively.
  • Keywords
    CMOSFETs; Degradation; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Niobium compounds; Stress; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635369
  • Filename
    1635369
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1989596