Charge Collection in Impact Ionization MOS Transistors

Single Event Upset is listed as one of the major challenges for further scaled devices by ITRS. For any newly proposed device, it is very important to study the potential robustness against single event upset. The charge collection is the fundamental parameter to determine the device radiation hardness. In this paper, 2-D device simulations were performed to study the charge collection in impact ionization MOS devices. The charge collection dependencies on high energy particle strike location as well as different bias conditions have been investigated. Unlike in conventional SOI CMOS device, little charge amplification effect was observed in this emerging new device.