DocumentCode
1989892
Title
Efficiency droop improvement in InGaN/GaN light-emitting diodes by graded-composition electron blocking layer
Author
Wang, C.H. ; Chang, W.T. ; Chang, S.P. ; Li, J.C. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution
Dept. of Photonic, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2011
fDate
Aug. 28 2011-Sept. 1 2011
Firstpage
940
Lastpage
941
Abstract
InGaN/GaN LED with a graded-composition electron blocking layer has superior hole injection and electron confinement by simulation. Experiment results demonstrated that such GEBL exhibited better electrical characteristics, and higher output power at high current density.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; wide band gap semiconductors; InGaN-GaN; electron confinement; graded-composition electron blocking layer; high current density; hole injection; light-emitting diodes; Aluminum; Charge carrier processes; Current density; Gallium nitride; Light emitting diodes; Power generation; Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location
Sydney, NSW
Print_ISBN
978-1-4577-1939-4
Type
conf
DOI
10.1109/IQEC-CLEO.2011.6193935
Filename
6193935
Link To Document