DocumentCode
1990167
Title
A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated Circuits
Author
Wu, Xusheng ; Chan, Philip C H ; Zhang, Shengdong ; Mansun Chan
Author_Institution
Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong, China. E-mail: kevinwu@ee.ust.hk
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
781
Lastpage
784
Abstract
Capped trimming hard-mask (CTHM) patterning technique has been developed based on standard materials and processing equipments. By using the CTHM technique, sub-50nm feature sized pattern can be realized based on 0.5μm lithography technology. Imaging layer for capping and hard-mask layer shoul d have different etching selectivity and good contiguity to each other. Good control of trimming etching and hard-mask etching processes enable patterning of features with ultra-small dimension.
Keywords
CMOS technology; Circuits; Costs; Etching; FinFETs; Lithography; MOSFETs; Process control; Resists; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Conference_Location
Howloon, Hong Kong
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635393
Filename
1635393
Link To Document