Title :
Extraction of Early Voltage and Thermal Resistance in InP/InGaAs HBTs
Author :
Chang, Yang-Hua ; Chang, Zhi-Juan ; Hsu, Hui-Feng
Author_Institution :
Department of Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, R. O. C., E-mail: changyh@yuntech.edu.tw
Abstract :
In this paper, we propose a procedure to extract the Early voltage and thermal resistance in InP/InGaAs HBTs. The technique is able to differentiate the effects of the Early voltage and the thermal resistance in Ic-VCEchacteristic. Avalanche breakdown effect is also considered. The extraction result is applied to VBIC model and shows excellent agreement with measurement data.
Keywords :
Avalanche breakdown; Electric breakdown; Electrical resistance measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Substrates; Temperature; Thermal resistance; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635395
