DocumentCode
1990245
Title
Trap-Related Current Collapse Effects in GaN HEMTs
Author
Ma, L. ; Wang, Y. ; Guo, T.Y. ; Lu, J. ; Hao, Z.B. ; Luo, Y. ; Yu, Z.P.
Author_Institution
Institute of Mircoelectronics, Tsinghua University, Beijing, China, E-mail: mrdragon99@mails.tsinghua.edu.cn.
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
795
Lastpage
798
Abstract
The current collapse effects are investigated in GaN HEMTs by means of dc and dynamic measurements. The trapping-detrapping process is demonstrated by varying the hold time from 0.1s to 20s and the delay time from l0us to l00ms. The relevant time constant is more than ls. Our simulation result show that the gate-induced collapse is related both to the high surface state density and high vertical electric filed. New structures are simulated to demonstrate the advantages in reducing both gate-induced and buffer-induced collapse.
Keywords
Aluminum gallium nitride; Analytical models; Buffer layers; Current measurement; Delay effects; Electron traps; Gallium nitride; HEMTs; MODFETs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635397
Filename
1635397
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