Title :
Improved I-V Characteristics of SiC MOSFETs by TCE Thermal Gate Oxidation
Author :
Yang, B.L. ; Lin, L.M. ; Xu, J.P. ; Lai, P.T.
Author_Institution :
department of Electrical and Electronic Engineering, The University of Hong, Hong, Hong Kong, E-mail: laip@eee.hku.hk
Abstract :
The effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the Id-Vdcharacteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiC/SiO2interface, and also to the gettering of charged impurities and reduction of physical defects by the chlorine incorporated in the gate oxide.
Keywords :
Electric variables; Electron mobility; Furnaces; Implants; MOSFETs; Oxidation; Silicon carbide; Temperature; Thermal conductivity; Threshold voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635399
