Title :
Heterostructure PIN Rectifier Diode For Power Applications
Author :
Mazhari, B. ; Sinha, M. ; Dixit, J.
Author_Institution :
Department of Electrical Engineering, Indian Institute of technology, Kanpur, India, E-mail: baquer@iitk.ac.in
Abstract :
We propose use of heterostructures in PIN rectifiler diodes for obtaining faster switching speed. It is shown that by employing a small bandgap material in the heavily doped P layer and a wide bandgap material in the intrinsic region, reverse recovery time can be significantly lowered without compromising either the breakdown or the forward ON voltage.
Keywords :
Breakdown voltage; Charge carrier lifetime; Current density; Photonic band gap; Radiative recombination; Rectifiers; Schottky diodes; Semiconductor devices; Semiconductor diodes; Switching circuits;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635400
