Title :
A low-power ΣΔ ADC optimized for GSM/EDGE standard in 65-nm CMOS
Author :
Fakhoury, Hussein ; Jabbour, Chadi ; Khushk, Hasham ; Nguyen, Van-Tam ; Loumeau, Patrick
Author_Institution :
Comelec Dept., Telecom-Paristech, Paris, France
Abstract :
A ΣΔ ADC with both Signal Transfer Function (STF) and Noise Transfer Function (NTF) optimized for GSM/EDGE application is presented. A direct-feedforward single-loop filter is used to improve linearity of the modulator at low supply voltage. From the edge of the signal bandwidth to over 1MHz of band, measured STF is flat and in-band ripple is less than O.OldB. Clocked @ 26MHz the modulator achieves 82dB dynamic-range, 80dB peak SNR, -85dB peak THD, 88dBc peak SFDR. Implemented in 65-nm CMOS, it consumes 1.74mW from the 1.2V supply and occupies an active die area of 0.081mm2 (395μm×205μm) without voltage references.
Keywords :
CMOS integrated circuits; analogue-digital conversion; filters; CMOS technology; GSM-EDGE standard; direct-feedforward single-loop filter; frequency 26 MHz; in-band ripple; low-power ΣΔ ADC; noise transfer function; power 1.74 mW; signal transfer function; size 65 nm; voltage 1.2 V; Bandwidth; CMOS integrated circuits; Clocks; GSM; Modulation; Noise; Transistors;
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
DOI :
10.1109/ISCAS.2011.5937764
