Title :
Two-stage GaN HEMT based class-C pulsed amplifier for S-band radar applications
Author :
Kashif, A. ; Azam, S. ; Mughal, F. ; Cheema, N.B. ; Imran, M.
Author_Institution :
Centre of Excellence in Appl. Sci. & Technol. (CESAT), Islamabad, Pakistan
Abstract :
High performance amplifiers are always demanding in wireless communication. To amplify RF signal, power amplifier is considered as a heart source of the system. We have designed and developed a high performance two-stage pulsed class-C broadband PA for moderate range surveillance radar applications in the frequency range from 2.45 - 2.75 GHz. A common source configuration is used to deliver peak RF output power above 38 dBm. Hence, this amplifier can be used as driver amplifier for high power surveillance radar applications etc. The measured RF peak power of the amplifier is ~ 39 dBm.
Keywords :
III-V semiconductors; driver circuits; gallium compounds; high electron mobility transistors; microwave amplifiers; power amplifiers; power measurement; pulse amplifiers; search radar; transistor circuits; wide band gap semiconductors; wideband amplifiers; GaN; HEMT; RF output power; RF signal; S-band radar applications; class-C pulsed amplifier; driver amplifier; frequency 2.45 GHz to 2.75 GHz; high power surveillance radar applications; power amplifier; pulsed class-C broadband PA; wireless communication; Broadband communication; Gallium nitride; HEMTs; Radar tracking; Radio frequency; Class-C; GaN; HEMT; S-band; amplifier;
Conference_Titel :
Applied Sciences and Technology (IBCAST), 2015 12th International Bhurban Conference on
Conference_Location :
Islamabad
DOI :
10.1109/IBCAST.2015.7058556
