Title :
Edge and surface emitting quantum dot lasers
Author :
Bimberg, D. ; Ledentsov, N.N. ; Grundmann, M. ; Heinrichsdorff, F. ; Ustinov, V.M. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Lott, J.A.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Quantum dot (QD) edge emitting and vertical cavity lasers are realized using a self-organized growth approach. Threshold current densities at room temperature (RT) of about 60 A/cm/sup 2/ for edge emitting and 170 A/cm/sup 2/ for vertical cavity lasers are measured. High internal (>96%) and differential (70%) efficiencies are obtained for InGaAs-AlGaAs lasers based on vertically coupled QDs and RT 1 W continuous wave operation is demonstrated. QD lasers exhibit much larger gain, differential gain and smaller linewidth enhancement factor as compared to conventional quantum well devices.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; surface emitting lasers; thermal stability; 1 W; 70 percent; 96 percent; InGaAs-AlGaAs; InGaAs-AlGaAs lasers; continuous wave operation; differential efficiency; differential gain; gain; internal efficiency; linewidth enhancement factor; quantum dot edge emitting lasers; quantum dot vertical cavity lasers; room temperature; self-organized growth approach; surface emitting quantum dot lasers; threshold current densities; vertically coupled QDs; Charge carrier processes; Excitons; Laser theory; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650404
