Edge and surface emitting quantum dot lasers

Author

Bimberg, D. ; Ledentsov, N.N. ; Grundmann, M. ; Heinrichsdorff, F. ; Ustinov, V.M. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Lott, J.A.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

381

Lastpage

384

Abstract

Quantum dot (QD) edge emitting and vertical cavity lasers are realized using a self-organized growth approach. Threshold current densities at room temperature (RT) of about 60 A/cm/sup 2/ for edge emitting and 170 A/cm/sup 2/ for vertical cavity lasers are measured. High internal (>96%) and differential (70%) efficiencies are obtained for InGaAs-AlGaAs lasers based on vertically coupled QDs and RT 1 W continuous wave operation is demonstrated. QD lasers exhibit much larger gain, differential gain and smaller linewidth enhancement factor as compared to conventional quantum well devices.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; surface emitting lasers; thermal stability; 1 W; 70 percent; 96 percent; InGaAs-AlGaAs; InGaAs-AlGaAs lasers; continuous wave operation; differential efficiency; differential gain; gain; internal efficiency; linewidth enhancement factor; quantum dot edge emitting lasers; quantum dot vertical cavity lasers; room temperature; self-organized growth approach; surface emitting quantum dot lasers; threshold current densities; vertically coupled QDs; Charge carrier processes; Excitons; Laser theory; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; US Department of Transportation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650404

Filename

650404