• DocumentCode
    1990906
  • Title

    Preparation of ZnSe nanoparticles with femtosecond laser

  • Author

    Luo, C.W. ; Wang, H.I. ; Liao, L.W. ; Yang, C.S. ; Kobayashi, T.

  • Author_Institution
    Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    Aug. 28 2011-Sept. 1 2011
  • Firstpage
    1993
  • Lastpage
    1994
  • Abstract
    We demonstrate the fabrication of ZnSe nanoparticles using fs laser pulses. Following the irradiation of fs laser pulses at a wavelength of 800 nm and pulse duration of 100 fs, many hexagonal-phase ZnSe nanoparticles formed on the surface of an undoped (100) cubic ZnSe single-crystal wafer. The interesting phase transition from the cubic structure of ZnSe single-crystal wafer to the hexagonal structure of ZnSe nanoparticles may have been caused by the ultra-high ablation pressure at the local area due to the sudden injection of high-energy leading to solid-solid transition.
  • Keywords
    II-VI semiconductors; high-pressure solid-state phase transformations; high-speed optical techniques; laser ablation; nanofabrication; nanoparticles; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnSe; cubic structure; femtosecond laser pulse irradiation; hexagonal-phase nanoparticles; phase transition; solid-solid transition; time 100 fs; ultrahigh-ablation pressure; undoped ZnSe(100) cubic single-crystal wafer; wavelength 800 nm; Laser beams; Laser excitation; Nanoparticles; Pump lasers; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4577-1939-4
  • Type

    conf

  • DOI
    10.1109/IQEC-CLEO.2011.6193982
  • Filename
    6193982