DocumentCode
1990906
Title
Preparation of ZnSe nanoparticles with femtosecond laser
Author
Luo, C.W. ; Wang, H.I. ; Liao, L.W. ; Yang, C.S. ; Kobayashi, T.
Author_Institution
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2011
fDate
Aug. 28 2011-Sept. 1 2011
Firstpage
1993
Lastpage
1994
Abstract
We demonstrate the fabrication of ZnSe nanoparticles using fs laser pulses. Following the irradiation of fs laser pulses at a wavelength of 800 nm and pulse duration of 100 fs, many hexagonal-phase ZnSe nanoparticles formed on the surface of an undoped (100) cubic ZnSe single-crystal wafer. The interesting phase transition from the cubic structure of ZnSe single-crystal wafer to the hexagonal structure of ZnSe nanoparticles may have been caused by the ultra-high ablation pressure at the local area due to the sudden injection of high-energy leading to solid-solid transition.
Keywords
II-VI semiconductors; high-pressure solid-state phase transformations; high-speed optical techniques; laser ablation; nanofabrication; nanoparticles; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnSe; cubic structure; femtosecond laser pulse irradiation; hexagonal-phase nanoparticles; phase transition; solid-solid transition; time 100 fs; ultrahigh-ablation pressure; undoped ZnSe(100) cubic single-crystal wafer; wavelength 800 nm; Laser beams; Laser excitation; Nanoparticles; Pump lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location
Sydney, NSW
Print_ISBN
978-1-4577-1939-4
Type
conf
DOI
10.1109/IQEC-CLEO.2011.6193982
Filename
6193982
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