• DocumentCode
    1991144
  • Title

    Influence of AlN quality on the transverse and longitudinal coupling coefficients of acoustic devices

  • Author

    Capilla, J. ; Clement, M. ; Olivares, J. ; Sangrador, J. ; Iborra, E.

  • Author_Institution
    Grupo de Microsistemas y Mater. Electronicos, Univ. Politec. de Madrid, Madrid, Spain
  • fYear
    2009
  • fDate
    20-23 Sept. 2009
  • Firstpage
    2174
  • Lastpage
    2177
  • Abstract
    The transverse and longitudinal piezoelectric response of AlN polycrystalline thin films is analyzed by means of measurements in surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices fabricated on films of identical characteristics. The crystal quality of the films is correlated with the measured coupling factors; it is found that the presence of grains with the c-axis tilted with respect to the substrate normal is detrimental to the piezoelectric response of AlN. However, the presence of tilted crystal affects differently the longitudinal and transverse response of the devices, degrading more severely the latter as the amount of tilted grains increases. The presence of such defects leads to the destruction of the mechanical coherence in the transverse deformation when the electric field parallel to the surface is applied.
  • Keywords
    aluminium compounds; bulk acoustic wave devices; crystal defects; crystal orientation; piezoelectric thin films; surface acoustic wave devices; AlN; AlN polycrystalline thin films; AlN quality effects; BAW devices; SAW devices; acoustic devices; bulk acoustic wave devices; coupling factors; crystal defects; film crystal quality; longitudinal coupling coefficients; longitudinal piezoelectric response; mechanical coherence destruction; surface acoustic wave devices; tilted crystal effects; transverse coupling coefficients; transverse deformation; transverse piezoelectric response; Acoustic devices; Acoustic measurements; Acoustic waves; Dielectric losses; Piezoelectric devices; Piezoelectric films; Piezoelectric materials; Surface acoustic wave devices; Surface acoustic waves; Thin film devices; BAW; Polycrystalline AlN; SAW; electromechanical coupling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2009 IEEE International
  • Conference_Location
    Rome
  • ISSN
    1948-5719
  • Print_ISBN
    978-1-4244-4389-5
  • Electronic_ISBN
    1948-5719
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2009.5441415
  • Filename
    5441415