DocumentCode
1991261
Title
The Effect of Profile Design, Bias Conditions and Load Impedance on Inter-Modulation Distortion in C-Band GaAs Power FETs
Author
white, Paul M. ; Van Rees, Barteld ; Leonard, Michael F.
Author_Institution
Raytheon Company, Special Microwave Devices Operation Bearfoot Road, Northborough, Massachusetts 01532
fYear
1984
fDate
10-13 Sept. 1984
Firstpage
821
Lastpage
826
Abstract
A comparison of the intermodulation distortion performance of FETs fabricated with flat, spike and 1/x3 type profiles showed that they differ most in their response to gate bias. The effect of load impedance is similar in the three cases and is closely related to its effect on gain compression. A statistical comparison of 43 devices confirmed that the spike profile offers a small but distinct linearity improvement over the other types.
Keywords
Buffer layers; Electromagnetic heating; FETs; Fabrication; Gallium arsenide; Impedance; Intermodulation distortion; Linearity; Microwave devices; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1984. 14th European
Conference_Location
Liege, Belgium
Type
conf
DOI
10.1109/EUMA.1984.333451
Filename
4132133
Link To Document