Influence of X-ray radiation on standard and uniaxial strained triple-gate SOI FinFETs

In this work, X-ray radiation influence on the digital and analog parameters of triple gate FinFETs was studied, considering two different splits: unstrained and uniaxial strained. Comparing p and n MuGFETs response to radiation, the influence of X-ray can be more harmful in nMuGFET devices due to the positive charges at the buried oxide, increasing the back gate leakage current. On the other hand in pMuGFET devices for which the radiation makes the device more immune to the back interface conduction, the radiation results in some improvement of the device performance. The results show that the uniaxial strained devices are more susceptible to the radiation effect which suggests the influence of the silicon nitride cap layer and/or the strain influence on these devices.