Title :
Microdose induced drain leakage effects in power trench MOSFETs: Experiment and modeling
Author :
Zebrev, Gennady I. ; Vatuev, Alexander S. ; Useinov, Rustem G. ; Emeliyanov, Vladimir V. ; Anashin, Vasily S. ; Gorbunov, Maxim S. ; Turin, Valentin O.
Author_Institution :
Dept. of Micro, Nanoelectron. of Nat. Res. Nucl. Univ. MEPHI, Moscow, Russia
Abstract :
We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We have found experimentally that cumulative increase of leakage drain current occurs by means of stochastic steps corresponding to strike of a single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs has been proposed.
Keywords :
Monte Carlo methods; ion beam effects; leakage currents; power MOSFET; radiation hardening (electronics); semiconductor device models; stochastic processes; MOSFET gate oxide; Monte Carlo method; analytic model; high-LET heavy ions; leakage drain; linear energy transfer; microdose induced drain leakage effects; microdose induced drain-source leakage current; power MOSFET; power trench MOSFET; space heavy ion environment; stochastic single event; Ions; Leakage currents; Logic gates; MOSFET; Radiation effects; Semiconductor device modeling; LET; Microdose effects; Monte Carlo; heavy ions; parametric failures; parasitic transistor; singleevent effects; source-drain leakage; total dose effects; trench power MOSFETs;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937359
