DocumentCode :
1991657
Title :
Total ionizing dose effect on low on/off switching ratio TiO2 memristive memories
Author :
Chi Yaqing ; Liu Rongrong ; Tang Zhensen ; Song Ruiqiang
Author_Institution :
Coll. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
fYear :
2013
fDate :
23-27 Sept. 2013
Firstpage :
1
Lastpage :
3
Abstract :
Total ionizing dose effect is experimentally investigated on the electrical characteristics of low on/off switching ratio TiO2 memristive memories for the first time. Degradations of parameters have no impact on data storage and reading/writing operations.
Keywords :
memristors; radiation hardening (electronics); random-access storage; switching circuits; titanium compounds; TiO2; data storage; electrical characteristics; low on/off switching ratio memristive memories; reading-writing operations; total ionizing dose effect; Memristors; Nonvolatile memory; Radiation effects; Resistance; Switches; Voltage measurement; Writing; Memristive; Parameter degradation; TID;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
Type :
conf
DOI :
10.1109/RADECS.2013.6937360
Filename :
6937360
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1991657
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