• DocumentCode
    1991657
  • Title

    Total ionizing dose effect on low on/off switching ratio TiO2 memristive memories

  • Author

    Chi Yaqing ; Liu Rongrong ; Tang Zhensen ; Song Ruiqiang

  • Author_Institution
    Coll. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
  • fYear
    2013
  • fDate
    23-27 Sept. 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Total ionizing dose effect is experimentally investigated on the electrical characteristics of low on/off switching ratio TiO2 memristive memories for the first time. Degradations of parameters have no impact on data storage and reading/writing operations.
  • Keywords
    memristors; radiation hardening (electronics); random-access storage; switching circuits; titanium compounds; TiO2; data storage; electrical characteristics; low on/off switching ratio memristive memories; reading-writing operations; total ionizing dose effect; Memristors; Nonvolatile memory; Radiation effects; Resistance; Switches; Voltage measurement; Writing; Memristive; Parameter degradation; TID;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
  • Conference_Location
    Oxford
  • Type

    conf

  • DOI
    10.1109/RADECS.2013.6937360
  • Filename
    6937360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1991657