DocumentCode :
1991717
Title :
EMC influence of the charge pump in linear regulators - Design, simulation and measurements
Author :
Wittmann, Juergen ; Wicht, Bernhard
Author_Institution :
Texas Instrum., Freising, Germany
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
1359
Lastpage :
1362
Abstract :
The charge pump belongs to the most critical blocks for electromagnetic compatibility (EMC) of low dropout linear regulators (LDO) because of its switching nature. The goal of this paper is to contribute charge pump design practice and a prediction method for the LDO EMC performance already in an early design phase. LDO noise coupling mechanisms are analyzed. EMC aware circuit design includes the choice of low noise architectures, the right switching frequency and noise filtering. The derived simulation method shows very good matching with EMC test results for an LDO with two different charge pumps fabricated in 350nm high-voltage BiCMOS technology. For a realistic prediction of the EMC noise magnitude, a relatively simple simulation setup gives results with <;3dBμV accuracy. A trippler current mode charge pump turned out to be well suitable for EMC. Conducted emissions could be predicted and confirmed to be improved by ~50dBμV versus a conventional voltage mode charge pump.
Keywords :
BiCMOS integrated circuits; charge pump circuits; circuit simulation; electromagnetic compatibility; integrated circuit design; integrated circuit measurement; integrated circuit noise; power integrated circuits; EMC aware circuit design; LDO noise coupling mechanism; charge pump design; charge pump simulation; electromagnetic compatibility; high-voltage BiCMOS technology; low dropout linear regulators; low noise architectures; noise filtering; prediction method; size 350 nm; switching frequency; trippler current mode charge pump; Batteries; Capacitors; Charge pumps; Electromagnetic compatibility; Integrated circuits; Noise; Regulators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5937824
Filename :
5937824
Link To Document :
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